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| BC847BPDW1T1, BC847CPDW1T1, BC848BPDW1T1, BC848CPDW1T1 Dual General Purpose Transistors http://onsemi.com NPN/PNP Duals (3) (2) (1) These transistors are designed for general purpose amplifier applications. They are housed in the SOT-363/SC-88 which is designed for low power surface mount applications. * Device Marking: BC847BPDW1T1 = 13F BC847CPDW1T1 = 13G BC848BPDW1T1 = 13K BC848CPDW1T1 = 13L MAXIMUM RATINGS - NPN Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current -- Continuous Symbol VCEO VCBO VEBO IC BC847 45 50 6.0 100 BC848 30 30 5.0 100 Unit V V V mAdc Q1 Q2 (4) (5) (6) 65 4 1 2 3 SOT-363/SC-88 CASE 419B STYLE 1 MAXIMUM RATINGS - PNP Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current -- Continuous Symbol VCEO VCBO VEBO IC BC847 -45 -50 -5.0 -100 BC848 -30 -30 -5.0 -100 Unit V V V mAdc See Table DEVICE MARKING THERMAL CHARACTERISTICS Characteristic Total Device Dissipation Per Device FR- 5 Board (1) TA = 25C Derate Above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Range 1. FR-5 = 1.0 x 0.75 x 0.062 in Symbol PD Max 380 250 Unit mW ORDERING INFORMATION Device Package SOT-363 SOT-363 SOT-363 SOT-363 Shipping 3000 Units/Reel 3000 Units/Reel 3000 Units/Reel 3000 Units/Reel 3.0 RqJA TJ, Tstg 328 - 55 to +150 mW/C C/W C BC847BPDW1T1 BC847CPDW1T1 BC848BPDW1T1 BC848CPDW1T1 (c) Semiconductor Components Industries, LLC, 2000 1 February, 2000 - Rev. 0 Publication Order Number: BC847BPDW1T1/D BC847BPDW1T1, BC847CPDW1T1, BC848BPDW1T1, BC848CPDW1T1 ELECTRICAL CHARACTERISTICS (NPN) (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage (IC = 10 mA) Collector - Emitter Breakdown Voltage (IC = 10 A, VEB = 0) Collector - Base Breakdown Voltage (IC = 10 mA) Emitter - Base Breakdown Voltage (IE = 1.0 mA) Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150C) V(BR)CEO BC847 Series BC848 Series V(BR)CES BC847 Series BC848 Series V(BR)CBO BC847 Series BC848 Series V(BR)EBO BC847 Series BC848 Series ICBO 6.0 5.0 -- -- -- -- -- -- -- -- 15 5.0 nA A 50 30 -- -- -- -- V 50 30 -- -- -- -- V 45 30 -- -- -- -- V V ON CHARACTERISTICS DC Current Gain (IC = 10 A, VCE = 5.0 V) hFE BC847B, BC848B BC847C, BC848C BC847B, BC848B BC847C, BC848C VCE(sat) VBE(sat) VBE(on) -- -- 200 420 -- -- -- -- 580 -- 150 270 290 520 -- -- 0.7 0.9 660 -- -- -- 475 800 0.25 0.6 -- -- 700 770 V V mV -- (IC = 2.0 mA, VCE = 5.0 V) Collector - Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Collector - Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) Base - Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Base - Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) Base - Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) Base - Emitter Voltage (IC = 10 mA, VCE = 5.0 V) SMALL- SIGNAL CHARACTERISTICS Current - Gain -- Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz) BC847B, BC848B BC847C, BC848C fT Cobo NF -- -- -- -- 10 4.0 100 -- -- -- -- 4.5 MHz pF dB http://onsemi.com 2 BC847BPDW1T1, BC847CPDW1T1, BC848BPDW1T1, BC848CPDW1T1 ELECTRICAL CHARACTERISTICS (PNP) (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage (IC = -10 mA) Collector - Emitter Breakdown Voltage (IC = -10 A, VEB = 0) Collector - Base Breakdown Voltage (IC = -10 mA) Emitter - Base Breakdown Voltage (IE = -1.0 mA) V(BR)CEO BC847 Series BC848 Series V(BR)CES BC847 Series BC848 Series V(BR)CBO BC847 Series BC848 Series V(BR)EBO BC847 Series BC848 Series ICBO -5.0 -5.0 -- -- -- -- -- -- -- -- -15 -4.0 nA A -50 -30 -- -- -- -- V -50 -30 -- -- -- -- V -45 -30 -- -- -- -- V V Collector Cutoff Current (VCB = -30 V) Collector Cutoff Current (VCB = -30 V, TA = 150C) ON CHARACTERISTICS DC Current Gain (IC = -10 A, VCE = -5.0 V) hFE BC847B, BC848B BC847C, BC848C BC847B, BC848B BC847C, BC848C VCE(sat) -- -- VBE(sat) -- -- VBE(on) -0.6 -- -- -- -0.75 -0.82 -0.7 -0.9 -- -- V -- -- -0.3 -0.65 V -- -- 200 420 150 270 290 520 -- -- 475 800 V -- (IC = -2.0 mA, VCE = -5.0 V) Collector - Emitter Saturation Voltage (IC = -10 mA, IB = -0.5 mA) (IC = -100 mA, IB = -5.0 mA) Base - Emitter Saturation Voltage (IC = -10 mA, IB = -0.5 mA) (IC = -100 mA, IB = -5.0 mA) Base - Emitter On Voltage (IC = -2.0 mA, VCE = -5.0 V) (IC = -10 mA, VCE = -5.0 V) SMALL- SIGNAL CHARACTERISTICS Current - Gain -- Bandwidth Product (IC = -10 mA, VCE = -5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = -10 V, f = 1.0 MHz) Noise Figure (IC = -0.2 mA, VCE = -5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz) fT Cob NF 100 -- -- -- -- -- -- 4.5 10 MHz pF dB http://onsemi.com 3 BC847BPDW1T1, BC847CPDW1T1, BC848BPDW1T1, BC848CPDW1T1 TYPICAL NPN CHARACTERISTICS 2.0 hFE , NORMALIZED DC CURRENT GAIN 1.5 1.0 0.8 0.6 0.4 0.3 0.2 VCE = 10 V TA = 25C V, VOLTAGE (VOLTS) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.2 0.5 50 2.0 5.0 10 1.0 20 IC, COLLECTOR CURRENT (mAdc) 100 200 0 0.1 VCE(sat) @ IC/IB = 10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) 50 70 100 VBE(on) @ VCE = 10 V TA = 25C VBE(sat) @ IC/IB = 10 Figure 1. Normalized DC Current Gain 2.0 VCE , COLLECTOR-EMITTER VOLTAGE (V) TA = 25C 1.6 IC = 200 mA 1.2 IC = IC = 10 mA 20 mA 0.8 IC = 50 mA IC = 100 mA VB, TEMPERATURE COEFFICIENT (mV/ C) 1.0 Figure 2. "Saturation" and "On" Voltages -55C to +125C 1.2 1.6 2.0 2.4 2.8 0.4 0 0.02 0.1 1.0 IB, BASE CURRENT (mA) 10 20 0.2 10 1.0 IC, COLLECTOR CURRENT (mA) 100 Figure 3. Collector Saturation Region Figure 4. Base-Emitter Temperature Coefficient http://onsemi.com 4 BC847BPDW1T1, BC847CPDW1T1, BC848BPDW1T1, BC848CPDW1T1 TYPICAL NPN CHARACTERISTICS 10 7.0 C, CAPACITANCE (pF) 5.0 Cib TA = 25C f T, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) 400 300 200 3.0 Cob 2.0 100 80 60 40 30 20 0.5 0.7 VCE = 10 V TA = 25C 1.0 0.4 0.6 0.8 1.0 4.0 6.0 8.0 10 2.0 VR, REVERSE VOLTAGE (VOLTS) 20 40 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 30 50 Figure 5. Capacitances Figure 6. Current-Gain - Bandwidth Product 1.0 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 5 V TA = 25C 2.0 1.0 0.5 V, VOLTAGE (VOLTS) TA = 25C 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 5.0 V 0.4 0.2 0.2 VCE(sat) @ IC/IB = 10 0.1 0.2 10 100 1.0 IC, COLLECTOR CURRENT (mA) 0 0.2 0.5 1.0 10 20 2.0 5.0 IC, COLLECTOR CURRENT (mA) 50 100 200 Figure 7. DC Current Gain Figure 8. "On" Voltage VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2.0 TA = 25C 1.6 20 mA 1.2 IC = 10 mA 50 mA 100 mA 200 mA VB, TEMPERATURE COEFFICIENT (mV/ C) -1.0 -1.4 -1.8 VB for VBE -2.2 -55C to 125C 0.8 0.4 -2.6 0 -3.0 0.2 0.5 10 20 5.0 1.0 2.0 IC, COLLECTOR CURRENT (mA) 50 100 200 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 5.0 10 20 Figure 9. Collector Saturation Region Figure 10. Base-Emitter Temperature Coefficient http://onsemi.com 5 BC847BPDW1T1, BC847CPDW1T1, BC848BPDW1T1, BC848CPDW1T1 TYPICAL PNP CHARACTERISTICS 2.0 hFE , NORMALIZED DC CURRENT GAIN 1.5 1.0 0.7 0.5 VCE = -10 V TA = 25C V, VOLTAGE (VOLTS) -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 VCE(sat) @ IC/IB = 10 -0.5 -1.0 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mAdc) -50 -100 VBE(on) @ VCE = -10 V TA = 25C VBE(sat) @ IC/IB = 10 0.3 0.2 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 IC, COLLECTOR CURRENT (mAdc) -100 -200 0 -0.1 -0.2 Figure 11. Normalized DC Current Gain Figure 12. "Saturation" and "On" Voltages -2.0 VB , TEMPERATURE COEFFICIENT (mV/ C) VCE , COLLECTOR-EMITTER VOLTAGE (V) TA = 25C -1.6 1.0 -55C to +125C 1.2 1.6 2.0 2.4 2.8 -1.2 IC = -10 mA IC = -50 mA IC = -200 mA IC = -100 mA -0.8 -0.4 IC = -20 mA 0 -0.02 -0.1 -1.0 IB, BASE CURRENT (mA) -10 -20 -0.2 -10 -1.0 IC, COLLECTOR CURRENT (mA) -100 Figure 13. Collector Saturation Region f T, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) Figure 14. Base-Emitter Temperature Coefficient 400 300 200 150 100 80 60 40 30 20 -0.5 VCE = -10 V TA = 25C 10 Cib 7.0 TA = 25C C, CAPACITANCE (pF) 5.0 Cob 3.0 2.0 1.0 -0.4 -0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc) Figure 15. Capacitances Figure 16. Current-Gain - Bandwidth Product http://onsemi.com 6 BC847BPDW1T1, BC847CPDW1T1, BC848BPDW1T1, BC848CPDW1T1 1.0 D = 0.5 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.2 0.1 0.05 0.02 0.01 0.01 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.001 0 1.0 10 100 t, TIME (ms) 1.0 k 10 k 100 k 1.0 M ZJA(t) = r(t) RJA RJA = 328C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) 0.1 Figure 17. Thermal Response -200 1s IC, COLLECTOR CURRENT (mA) -100 -50 TA = 25C TJ = 25C 3 ms The safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 14 is based upon TJ(pk) = 150C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) 150C. TJ(pk) may be calculated from the data in Figure 13. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown. -10 -5.0 BC558 BC557 BC556 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT -5.0 -10 -30 -45 -65 -100 VCE, COLLECTOR-EMITTER VOLTAGE (V) -2.0 -1.0 Figure 18. Active Region Safe Operating Area http://onsemi.com 7 BC847BPDW1T1, BC847CPDW1T1, BC848BPDW1T1, BC848CPDW1T1 INFORMATION FOR USING THE SOT-363 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. SOT-363 0.5 mm (min) 1.9 mm SOT-363 POWER DISSIPATION The power dissipation of the SOT-363 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SOT-363 package, PD can be calculated as follows: PD = TJ(max) - TA RJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 150 milliwatts. PD = 150C - 25C 833C/W = 150 milliwatts The 833C/W for the SOT-363 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 150 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT-363 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal CladTM. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10C. * The soldering temperature and time shall not exceed 260C for more than 10 seconds. * When shifting from preheating to soldering, the maximum temperature gradient shall be 5C or less. * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. http://onsemi.com 8 EEE EEE EEE EEE EEE EEE EEE EEE EEE EEE EEE EEE EEE EEE EEE EEE 0.4 mm (min) SOLDERING PRECAUTIONS 0.65 mm 0.65 mm BC847BPDW1T1, BC847CPDW1T1, BC848BPDW1T1, BC848CPDW1T1 Notes http://onsemi.com 9 BC847BPDW1T1, BC847CPDW1T1, BC848BPDW1T1, BC848CPDW1T1 Notes http://onsemi.com 10 BC847BPDW1T1, BC847CPDW1T1, BC848BPDW1T1, BC848CPDW1T1 PACKAGE DIMENSIONS SOT-363/SC-88 CASE 419B-01 ISSUE G A G V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 6 5 4 S 1 2 3 -B- D 6 PL 0.2 (0.008) M B M N J C DIM A B C D G H J K N S V INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --- 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 0.012 0.016 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --- 0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 0.30 0.40 STYLE 1: PIN 1. 2. 3. 4. 5. 6. EMITTER 2 BASE 2 COLLECTOR 1 EMITTER 1 BASE 1 COLLECTOR 2 H K http://onsemi.com 11 BC847BPDW1T1, BC847CPDW1T1, BC848BPDW1T1, BC848CPDW1T1 Thermal Clad is a trademark of the Bergquist Company. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION North America Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor - European Support German Phone: (+1) 303-308-7140 (M-F 2:30pm to 5:00pm Munich Time) Email: ONlit-german@hibbertco.com French Phone: (+1) 303-308-7141 (M-F 2:30pm to 5:00pm Toulouse Time) Email: ONlit-french@hibbertco.com English Phone: (+1) 303-308-7142 (M-F 1:30pm to 5:00pm UK Time) Email: ONlit@hibbertco.com ASIA/PACIFIC: LDC for ON Semiconductor - Asia Support Phone: 303-675-2121 (Tue-Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong 800-4422-3781 Email: ONlit-asia@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-8549 Phone: 81-3-5487-8345 Email: r14153@onsemi.com Fax Response Line: 303-675-2167 800-344-3810 Toll Free USA/Canada ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 12 BC847BPDW1T1/D |
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